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 Ordering number : ENN8332
2SK3615
2SK3615
Features
* * *
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Low ON-resistance. Ultrahigh-speed switching. 4V drive.
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW10s, duty cycle1% Tc=25C Conditions Ratings 60 20 12 48 1 20 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Gate-to-Source Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=6A ID=6A, VGS=10V ID=6A, VGS=4V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min 60 1 10 1.2 4.8 8 45 60 790 115 88 10 40 70 60 60 85 2.6 typ max Unit V A A V S m m pF pF pF ns ns ns ns
Marking : K3615
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
62005PA MS IM TB-00001381 No.8332-1/4
2SK3615
Continued from preceding page.
Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=30V, VGS=10V, ID=12A VDS=30V, VGS=10V, ID=12A VDS=30V, VGS=10V, ID=12A IS=12A, VGS=0V Ratings min typ 16 4 3.4 1.0 1.2 max Unit nC nC nC V
Package Dimensions unit : mm 7518-004
6.5 5.0 2.3
Package Dimensions unit : mm 7003-004
6.5 5.0 2.3
1.5
4
1.5
0.5
0.5
4
7.0
5.5
5.5
7.0
0.8 1.6
7.5
1
0.5
2
0.8
1.2
3
0 to 0.2 1.2
0.6
0.6
2.5
0.85 0.7
0.85
0.5
1.2
1
2
3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP
2.3
2.3
1 : Gate 2 : Drain 3 : Source 4 : Drain SANYO : TP-FA
2.3
2.3
Switching Time Test Circuit
VDD=30V 10V 0V VIN ID=6A RL=5 VIN PW=10s D.C.1%
D
VOUT
G
P.G
50
S
2SK3615
5.0
ID -- VDS
3.5 V
10V 8.0V 6 .0V
10
ID -- VGS
VDS=10V
4.5 4.0
9
4.0V
Drain Current, ID -- A
3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0
Drain Current, ID -- A
VGS=3.0V
8 7 6 5 4
5.0
V
5C
0 0.5 1.0 1.5 2.0
2 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
25 C
Ta= 7
2.5
3
--25C
3.0 3.5
4.0
Drain-to-Source Voltage, VDS -- V
IT05210
Gate-to-Source Voltage, VGS -- V
IT05211
No.8332-2/4
2SK3615
150 140
RDS(on) -- VGS
Static Drain-to-Source On-State Resistance, RDS(on) -- m Ta=25C ID=6A
120 110 100 90 80 70 60 50 40 30 20 10 --60 --40 --20 0
RDS(on) -- Ta
Static Drain-to-Source On-State Resistance, RDS(on) -- m
130 120 110 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 12
V =4 V GS , 6A 10V I D= S= , VG 6A I D=
14
16
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
10
yfs -- ID
IT09341 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2
Ambient Temperature, Ta -- C
IT09342
IS -- VSD
VGS=0V
Forward Transfer Admittance, yfs -- S
7 5
VDS=10V
2
1.0 7 5 3 2
0.1 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Drain Current, ID -- A
5 3
5 7 10 IT05214
0.01 0.2
0.4
Ta= 7
0.6
25 C --25 C
0.8
C 5 C a= C 75 T 25 --2
Source Current, IS -- A
3
5C
1.0
1.2 IT05215
SW Time -- ID
3
Ciss, Coss, Crss -- VDS
f=1MHz
Diode Forward Voltage, VSD -- V
Switching Time, SW Time -- ns
2 100 7 5 3 2 10 7 5 3 2 1.0 0.1
VDD=30V VGS=10V Ciss, Coss, Crss -- pF
td(off) tf
tr
2
1000 7 5 3 2
Ciss
td(on)
100 7 5 3
Coss Crss
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10 9
10 IT05216 100 7 5 3 2
7
0
5
10
15
20
25
30 IT05217
VGS -- Qg
Drain-to-Source Voltage, VDS -- V
ASO
Gate-to-Source Voltage, VGS -- V
VDS=30V ID=12A Drain Current, ID -- A
IDP=48A
<1 0 s
10
8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20
0 s
ID=12A
s 1m s m 10 0ms
10 7 5 3 2 1.0 7 5 3 2 0.1 0.01
10
Operation in this area is limited by RDS(on). Ta=25C Single pulse
23 5 7 0.1 23 5 7 1.0 23
Total Gate Charge, Qg -- nC
IT09343
Drain-to-Source Voltage, VDS -- V
DC op
o ati er
5 7 10
n 2 c= (T
No.8332-3/4
5 C)
23 5 7 100 IT09344
2SK3615
1.2
PD -- Ta
Allowable Power Dissipation, PD -- W
25
PD -- Tc
Allowable Power Dissipation, PD -- W
1.0
20
0.8
15
0.6
10
0.4
0.2
5
0 0 20 40 60 80 100 120 140 160
0 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- C
IT09345
Case Temperature, Tc -- C
IT09346
Note on usage : Since the 2SK3615 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2005. Specifications and information herein are subject to change without notice.
PS No.8332-4/4


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